In a major leap toward ultra-efficient, high-speed memory technology, scientists in Japan have developed a spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) device that achieves the lowest write power ever recorded—cutting energy use by 35% while maintaining record-setting speeds.

Figure 1. The Magnetic Memory.

Engineered by a research team at Tohoku University’s Center for Innovative Integrated Electronic Systems (CIES), the new memory device tackles two longstanding barriers to commercial viability: high write power consumption and the reliance on external magnetic fields to switch magnetic states. Figure 1 shows Magnetic Memory.

Led by electrical engineering professor Dr. Tetsuo Endoh and physics professor Dr. Hideo Ohno, the team had previously addressed the magnetic field challenge by designing a canted SOT-MRAM that enabled fast, field-free switching down to 0.35 nanoseconds. The current study builds on that milestone, shifting focus to slashing write power without compromising speed or data retention.

A Game-Changer for Next-Gen Computing

As global demand for powerful, efficient integrated circuits grows—especially in AI and IoT applications—traditional memory types like SRAM and DRAM are increasingly limited by their constant power requirements, even in standby [1]. In contrast, MRAM offers non-volatile data storage using magnetic states, with SOT-MRAM standing out for its durability and speed.

“To keep pace with the demands of modern computing, this study aimed to solve the challenge of high write power in SOT-MRAM,” said Endoh.

By fine-tuning the device architecture—particularly the tilt angle of the canted magnetic layer and its magnetic anisotropy—researchers optimized energy efficiency using advanced micromagnetic simulations.

World’s Lowest Write Power: 156 fJ

The result is a world-first: a 75-degree canted SOT-MRAM cell that operates with just 156 femtojoules (fJ) of write power. Fabricated using a scalable 300-mm wafer process, the device demonstrated a 35% reduction in power usage during 0.35 ns field-free operation—without sacrificing reliability or performance. It maintained a strong thermal stability factor (E/kBT) of 70 and a high tunneling magnetoresistance (TMR) ratio of 170%.

“These results offer a roadmap for developing low-power, high-speed, and field-free SOT-MRAM, making the technology increasingly practical for commercial applications,” the researchers noted.

A Path Toward Energy-Efficient Computing

The breakthrough brings SOT-MRAM a step closer to replacing SRAM in next-generation electronics, potentially revolutionizing memory design for high-performance computing and mobile devices.

Reference:

1. https://interestingengineering.com/innovation/japan-new-magnetic-memory-record-speed

Cite this article:

Keerthana S (2025), Boosting RAM: New Magnetic Memory Cuts Write Power by 35% While Setting Speed Record, AnaTechMaz, pp.329